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Determining the material structure of microcrystalline silicon from Raman spectra

C. SmitEindhoven University of Technology, Department of Applied Physics, P. O. Box 513, 5600 MB Eindhoven, The NetherlandsR.A.C.M.M. van SwaaijDelft University of Technology, DIMES-ECTM, P. O. Box 5053, 2600 GB Delft, The NetherlandsH. DonkerDelft University of Technology, Laboratory for Inorganic Chemistry, Julianalaan 136, 2628 BL Delft, The NetherlandsA.M.H.N. PetitDelft University of Technology, DIMES-ECTM, P. O. Box 5053, 2600 GB Delft, The NetherlandsW. M. M. KesselsEindhoven University of Technology, Department of Applied Physics, P. O. Box 513, 5600 MB Eindhoven, The NetherlandsM. C. M. van de SandenEindhoven University of Technology, Department of Applied Physics, P. O. Box 513, 5600 MB Eindhoven, The Netherlands
2003en
ABI

Аннотация

An easy and reliable method to extract the crystalline fractions in microcrystalline films is proposed. The method is shown to overcome, in a natural way, the inconsistencies that arise from the regular peak fitting routines. We subtract a scaled Raman spectrum that was obtained from an amorphous silicon film from the Raman spectrum of the microcrystalline silicon film. This subtraction leaves us with the Raman spectrum of the crystalline part of the microcrystalline film and the crystalline fraction can be determined. We apply this method to a series of samples covering the transition regime from amorphous to microcrystalline silicon. The crystalline fractions show good agreement with x-ray diffraction (XRD) results, in contrast to crystalline fractions obtained by the fitting of Gaussian line profiles applied to the same Raman spectra. The spectral line shape of the crystalline contribution to the Raman spectrum shows a clear asymmetry, an observation in agreement with model calculations reported previously. The varying width of this asymmetrical peak is shown to correlate with the mean crystallite size as determined from XRD spectra.

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