Broadening spectral responses and achieving environmental stability in SnS<sub>2</sub>/Ag-NPs/HfO<sub>2</sub> flexible phototransistors
Muhammad Farooq KhanDepartment of Electrical Engineering, Sejong University, Seoul 05006, Republic of KoreaSana SadaqatDepartment of Physics, Riphah International University, Faisalabad Campus, 44000, PakistanMuhammad Asghar KhanDepartment of Electrical Engineering, Sejong University, Seoul 05006, Republic of KoreaShania RehmanDepartment of Semiconductor System Engineering, Sejong University, Seoul 05006, Republic of KoreaWaqas Siddique SubhaniDepartment of Physics, University of Lahore, Lahore, 53700, PakistanMohamed OuladsmaneDepartment of Chemistry, College of Science, King Saud University, Riyadh, 11451, Saudi ArabiaMalik Abdul RehmanDepartment of Chemical Engineering, New Uzbekistan University, Tashkent, 100007, UzbekistanFida AliDepartment of Electronics and Nano Engineering, Aalto University, P.O. Box 13500, FI-00076 Aalto, FinlandHarri LipsanenDepartment of Electronics and Nano Engineering, Aalto University, P.O. Box 13500, FI-00076 Aalto, FinlandZhipei SunDepartment of Electronics and Nano Engineering, Aalto University, P.O. Box 13500, FI-00076 Aalto, FinlandJonghwa EomDepartment of Physics and Astronomy, Sejong University, Seoul 05006, Republic of KoreaFaisal AhmedDepartment of Electronics and Nano Engineering, Aalto University, P.O. Box 13500, FI-00076 Aalto, Finland
ABI
Аннотация
/Ag-NPs photodetector, which shows excellent and stable performance under various bending curvatures (0, 20, and 10 mm), as it retains ∼80% of its photoresponsivity up to 500 bending cycles. Thus, our study provides a simple route to realize broadband and stable photoactivity in flexible 2D material-based devices.
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