Статья

Doping-dependent evolution of the electronic structure of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">La</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Sr</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">CuO</mml:mi></mml:mrow><mml:mrow><mml:mn>4</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>in the superconducting and metallic phases

A. InoDepartment of Physics and Department of Complexity Science and Engineering, University of Tokyo, Bunkyo-ku, Tokyo 113-0033, JapanC. KimDepartment of Applied Physics and Stanford Synchrotron Radiation Laboratory, Stanford University, Stanford, California 94305Masaaki NakamuraDepartment of Physics, Nara University of Education, Takabatake-cho, Nara 630-8528, JapanT. YoshidaDepartment of Physics and Department of Complexity Science and Engineering, University of Tokyo, Bunkyo-ku, Tokyo 113-0033, JapanT. MizokawaDepartment of Physics and Department of Complexity Science and Engineering, University of Tokyo, Bunkyo-ku, Tokyo 113-0033, JapanA. FujimoriDepartment of Physics and Department of Complexity Science and Engineering, University of Tokyo, Bunkyo-ku, Tokyo 113-0033, JapanZhi‐Xun ShenDepartment of Applied Physics and Stanford Synchrotron Radiation Laboratory, Stanford University, Stanford, California 94305T. KakeshitaDepartment of Advanced Materials Science, University of Tokyo, Bunkyo-ku, Tokyo 113-8656, JapanHiroshi EisakiDepartment of Advanced Materials Science, University of Tokyo, Bunkyo-ku, Tokyo 113-8656, JapanSatoshi UchidaDepartment of Advanced Materials Science, University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan

2002lv

ABI

Аннотация

The electronic structure of the ${\mathrm{La}}_{2\ensuremath{-}x}{\mathrm{Sr}}_{x}{\mathrm{CuO}}_{4}$ (LSCO) system has been studied by angle-resolved photoemission spectroscopy (ARPES). We report on the evolution of the Fermi surface, the superconducting gap, and the band dispersion around the extended saddle point $\mathbf{k}=(\ensuremath{\pi},0)$ with hole doping in the superconducting and metallic phases. As hole concentration x decreases, the flat band at $(\ensuremath{\pi},0)$ moves from above the Fermi level ${(E}_{\mathrm{F}})$ for $x>0.2$ to below ${E}_{\mathrm{F}}$ for $x<0.2,$ and is further lowered down to $x=0.05.$ From the leading-edge shift of ARPES spectra, the magnitude of the superconducting gap around $(\ensuremath{\pi},0)$ is found to monotonically increase as x decreases from $x=0.30$ down to $x=0.05$ even though ${T}_{c}$ decreases in the underdoped region, and the superconducting gap appears to smoothly evolve into the normal-state gap at $x=0.05.$ It is shown that the energy scales characterizing these low-energy structures have similar doping dependences. For the heavily overdoped sample $(x=0.30),$ the band dispersion and the ARPES spectral line shape are analyzed using a simple phenomenological self-energy form, and the electronic effective mass enhancement factor ${m}^{*}{/m}_{b}\ensuremath{\simeq}2$ has been found. As the hole concentration decreases, an incoherent component that cannot be described within the simple self-energy analysis grows intense in the high-energy tail of the ARPES peak. Some unusual features of the electronic structure observed for the underdoped region $(x\ensuremath{\lesssim}0.10)$ are consistent with numerical works on the stripe model.

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Идентификаторы

DOI: 10.1103/physrevb.65.094504

Цитирования и источники

Цитирований: 15Использованных источников: 0

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