Статья

Evolution of nanoporous silicon phase composition and electron energy structure under natural ageing

S. Yu. TurishchevSolid State Physics and Nanostructures Department; Voronezh State University; Universitetskaya pl. 1; 394006; Voronezh; RussiaAlexander LenshinSolid State Physics and Nanostructures Department; Voronezh State University; Universitetskaya pl. 1; 394006; Voronezh; RussiaÉ. P. DomashevskayaSolid State Physics and Nanostructures Department, Voronezh State University, Universitetskaya pl. 1, 394006 Voronezh, RussiaВ. М. КашкаровSolid State Physics and Nanostructures Department; Voronezh State University; Universitetskaya pl. 1; 394006; Voronezh; RussiaV. A. TerekhovSolid State Physics and Nanostructures Department; Voronezh State University; Universitetskaya pl. 1; 394006; Voronezh; RussiaK. N. PankovSolid State Physics and Nanostructures Department; Voronezh State University; Universitetskaya pl. 1; 394006; Voronezh; RussiaD. A. KhovivSolid State Physics and Nanostructures Department; Voronezh State University; Universitetskaya pl. 1; 394006; Voronezh; Russia

2009en

ABI

Аннотация

Abstract Nanoporous silicon layers were obtained on different types of single crystalline silicon substrates by standard electrochemical etching in HF solution. Investigations of electron structure, surface layers phase composition and photoluminescence evolution in nanoporous silicon during natural ageing for the time period for up to one year were performed with the use of the ultrasoft X‐ray emission spectroscopy (USXES), X‐ray absorption near‐edge structure (XANES) spectroscopy and photoluminescence. USXES and XANES spectra represent local partial density of states in valence and conduction band, correspondingly. The presence of the elementary silicon together with different silicon suboxides in surface layers is shown. Considerable differences in the kinetics of ageing can explain different photoluminescence properties of nanoporous silicon doped with P and Sb. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Идентификаторы

DOI: 10.1002/pssc.200881015

Цитирования и источники

Цитирований: 3Использованных источников: 0

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