Photoconductivity and Infrared-Light Absorption in p-GaAs/AlGaAs Quantum Wells
M. Ya. VinnichenkoPeter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, RussiaIvan MakhovPeter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, RussiaN. Yu. KharinPeter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, RussiaStephan GräfPeter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, RussiaV. Yu. PanevinPeter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, RussiaI. V. SedovaIoffe Institute, 194021, St. Petersburg, RussiaS. V. SorokinIoffe Institute, 194021, St. Petersburg, RussiaD. A. FirsovPeter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia
2021en
ABI
Аннотация
The low-temperature impurity-assisted photoconductivity and absorption spectra of a nanostructure with acceptor-doped multiple GaAs/AlGaAs quantum wells are investigated. The experimental absorption and photoconductivity spectra agree well with each other. Using the calculated energy spectrum of the hole and acceptor states in the quantum wells, the contributions of the transitions of holes from the ground acceptor state to the delocalized states of valence subbands and excited impurity states, and the contributions of the acceptor photoionization to the states above a quantum well, are identified.
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