Работы, цитирующие эту работу

Работ: 2

Работа: Fabrication of ultrafine silicon layers on sapphire

1. Variation of the Crystal Structure on Si(111) Surface Induced by Ion Bombardment and Subsequent Annealing

   Samad Nimatov, Б. Е. Умирзаков, F. Ya. Khudaikulov +1

   СтатьяIon-surface interactions and analysisTechnical Physics2019Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.108398

2. Iron ions distribution profile obtained by irradiating the silicon single crystal

   A. A. Shemukhin, A. V. Kozhemiako, Yu. V. Balakshin +1

   СтатьяIon-surface interactions and analysisJournal of Physics Conference Series2017Цитирований: 0

   ABIABI:AkademIndex/openalex/2017.article.000457