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A Rutile TiO<sub>2</sub> Electron Transport Layer for the Enhancement of Charge Collection for Efficient Perovskite Solar Cells

Yongling WangState Key Laboratory of Biochemical Engineering Institute of Process Engineering Chinese Academy of Sciences 1 North 2nd Street, Zhongguancun, Haidian Beijing 100190 ChinaJiawei WanState Key Laboratory of Biochemical Engineering Institute of Process Engineering Chinese Academy of Sciences 1 North 2nd Street, Zhongguancun, Haidian Beijing 100190 ChinaJie DingBeijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry Chinese Academy of Sciences Zhongguancun North First Street 2 100190 Beijing ChinaJin‐Song HuBeijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry Chinese Academy of Sciences Zhongguancun North First Street 2 100190 Beijing ChinaDan WangState Key Laboratory of Biochemical Engineering Institute of Process Engineering Chinese Academy of Sciences 1 North 2nd Street, Zhongguancun, Haidian Beijing 100190 China
2019en
ABI

Аннотация

Abstract Interfacial charge collection efficiency has demonstrated significant effects on the power conversion efficiency (PCE) of perovskite solar cells (PSCs). Herein, crystalline phase‐dependent charge collection is investigated by using rutile and anatase TiO 2 electron transport layer (ETL) to fabricate PSCs. The results show that rutile TiO 2 ETL enhances the extraction and transportation of electrons to FTO and reduces the recombination, thanks to its better conductivity and improved interface with the CH 3 NH 3 PbI 3 (MAPbI 3 ) layer. Moreover, this may be also attributed to the fact that rutile TiO 2 has better match with perovskite grains, and less trap density. As a result, comparing with anatase TiO 2 ETL, MAPbI 3 PSCs with rutile TiO 2 ETL delivers significantly enhanced performance with a champion PCE of 20.9 % and a large open circuit voltage ( V OC ) of 1.17 V.

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Цитирований: 3Использованных источников: 0