Direct-bandgap emission from hexagonal Ge and SiGe alloys
Elham FadalyDepartment of Applied Physics, Eindhoven University of Technology, Eindhoven, The NetherlandsAlain DijkstraDepartment of Applied Physics, Eindhoven University of Technology, Eindhoven, The NetherlandsJens Renè SuckertInstitut für Festkörpertheorie und -optik, Friedrich-Schiller-Universität Jena, Jena, GermanyDorian ZissInstitute of Semiconductor and Solid-State Physics, Johannes Kepler University, Linz, AustriaMarvin A. J. van TilburgDepartment of Applied Physics, Eindhoven University of Technology, Eindhoven, The NetherlandsChenyang MaoDepartment of Applied Physics, Eindhoven University of Technology, Eindhoven, The NetherlandsYizhen RenDepartment of Applied Physics, Eindhoven University of Technology, Eindhoven, The NetherlandsVictor T. van LangeDepartment of Applied Physics, Eindhoven University of Technology, Eindhoven, The NetherlandsKsenia KorzunDepartment of Applied Physics, Eindhoven University of Technology, Eindhoven, The NetherlandsSebastian KöllingDepartment of Applied Physics, Eindhoven University of Technology, Eindhoven, The NetherlandsMarcel A. VerheijenDepartment of Applied Physics, Eindhoven University of Technology, Eindhoven, The NetherlandsD. BussePhysik Department & Walter-Schottky-Institut, Technische Universität München, Garching, GermanyClaudia RödlInstitut für Festkörpertheorie und -optik, Friedrich-Schiller-Universität Jena, Jena, GermanyJ. FurthmüllerInstitut für Festkörpertheorie und -optik, Friedrich-Schiller-Universität Jena, Jena, GermanyF. BechstedtInstitut für Festkörpertheorie und -optik, Friedrich-Schiller-Universität Jena, Jena, GermanyJ. StanglInstitute of Semiconductor and Solid-State Physics, Johannes Kepler University, Linz, AustriaJonathan J. FinleyPhysik Department & Walter-Schottky-Institut, Technische Universität München, Garching, GermanySilvana BottiInstitut für Festkörpertheorie und -optik, Friedrich-Schiller-Universität Jena, Jena, GermanyJ. E. M. HaverkortDepartment of Applied Physics, Eindhoven University of Technology, Eindhoven, The NetherlandsErik P. A. M. BakkersDepartment of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands. [email protected]
2020en
ABI
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