Quantum Dot Superlattice Thermoelectric Materials and Devices
T. C. HarmanLincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420, USAPatrick J. TaylorLincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420, USAMichael WalshLincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420, USAB. E. LaForgeLincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420, USA
2002en
ABI
Аннотация
PbSeTe-based quantum dot superlattice structures grown by molecular beam epitaxy have been investigated for applications in thermoelectrics. We demonstrate improved cooling values relative to the conventional bulk (Bi,Sb)2(Se,Te)3 thermoelectric materials using a n-type film in a one-leg thermoelectric device test setup, which cooled the cold junction 43.7 K below the room temperature hot junction temperature of 299.7 K. The typical device consists of a substrate-free, bulk-like (typically 0.1 millimeter in thickness, 10 millimeters in width, and 5 millimeters in length) slab of nanostructured PbSeTe/PbTe as the n-type leg and a metal wire as the p-type leg.
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