Photoluminescence emission and Raman response of monolayer MoS_2, MoSe_2, and WSe_2
Philipp TonndorfInstitute of Physics, Chemnitz University of Technology, 09107 Chemnitz, GermanyRobert SchmidtInstitute of Physics, Chemnitz University of Technology, 09107 Chemnitz, GermanyPhilipp BöttgerInstitute of Physics, Chemnitz University of Technology, 09107 Chemnitz, GermanyXiao ZhangInstitute of Physics, Chemnitz University of Technology, 09107 Chemnitz, GermanyJanna BörnerInstitute of Chemistry, Chemnitz University of Technology, 09107 Chemnitz, GermanyA. LiebigInstitute of Physics, Chemnitz University of Technology, 09107 Chemnitz, GermanyM. AlbrechtInstitute of Physics, Chemnitz University of Technology, 09107 Chemnitz, GermanyChristian KlocSchool of Materials Science & Engineering, Nanyang Technological University, Singapore. Ovidiu D. GordanInstitute of Physics, Chemnitz University of Technology, 09107 Chemnitz, GermanyDietrich R. T. ZahnInstitute of Physics, Chemnitz University of Technology, 09107 Chemnitz, GermanySteffen Michaelis de VasconcellosInstitute of Physics, Chemnitz University of Technology, 09107 Chemnitz, GermanyRudolf BratschitschInstitute of Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany
2013en
ABI
Аннотация
We mechanically exfoliate mono- and few-layers of the transition metal dichalcogenides molybdenum disulfide, molybdenum diselenide, and tungsten diselenide. The exact number of layers is unambiguously determined by atomic force microscopy and high-resolution Raman spectroscopy. Strong photoluminescence emission is caused by the transition from an indirect band gap semiconductor of bulk material to a direct band gap semiconductor in atomically thin form.
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