Работы, цитирующие эту работу

Работ: 2

Работа: Negative differential resistance and resistive switching in SnO2/ZnO interface

1. Resistive Switching Behavior of SnO₂/ZnO Heterojunction Thin Films for Non-Volatile Memory Applications

   Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +6

   СтатьяAdvanced Memory and Neural ComputingEast European Journal of Physics2025Цитирований: 4

   ABIABI:AkademIndex/openalex/2025.article.000980

2. Structural, Morphological, and Electrophysical Properties of SnO2/ZnO Heterostructures Co-deposited on Si Substrates

   Azim K. Soatov, Abdumajit R. Turayev, Sh. U. Yuldashev +1

   ПрепринтZnO doping and propertiesResearch Square2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.preprint.001357