Работы, цитирующие эту работу

Работ: 4

1. Resistive Switching Behavior of SnO₂/ZnO Heterojunction Thin Films for Non-Volatile Memory Applications

   Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +6

   СтатьяAdvanced Memory and Neural ComputingEast European Journal of Physics2025Цитирований: 4

   ABIABI:AkademIndex/openalex/2025.article.000980

2. NDR in Co:SnO ₂ Memristors: Nanocluster Control for Enhanced Performance

   Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +3

   СтатьяAdvanced Memory and Neural ComputingCrystal Growth & Design2025Цитирований: 2

   ABIABI:AkademIndex/openalex/2025.article.001458

3. Magnetically Tunable Resistive Switching in Mn-Doped SnO ₂ Thin Films

   Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +3

   СтатьяZnO doping and propertiesCrystal Growth & Design2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.013968

4. Defect-engineered resistive switching and NDR behavior in Mn-doped SnO2 memristors

   Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +3

   СтатьяAdvanced Memory and Neural ComputingJournal of Materials Science Materials in Electronics2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.020423