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Статья

Exciton and antisite defect‐related luminescence in Lu<sub>3</sub>Al<sub>5</sub>O<sub>12</sub> and Y<sub>3</sub>Al<sub>5</sub>O<sub>12</sub> garnets

Yu. ZorenkoLaboratory of Optoelectronic Materials Ivan Franko National University of Lviv, 79017 Lviv, UkraineA. VoloshinovskiĭPhysical Department Ivan Franko National University of Lviv, 79005 Lviv, UkraineV. SavchynLaboratory of Optoelectronic Materials Ivan Franko National University of Lviv, 79017 Lviv, UkraineT. VoznyakLaboratory of Optoelectronic Materials Ivan Franko National University of Lviv, 79017 Lviv, UkraineM. NiklInstitute of Physics AS CR, 162 53 Prague, Czech RepublicKarel NejezchlebCrytur Ltd, 51119 Turnov, Czech RepublicV. V. MikhaĭlinPhysical Faculty, Moscow State University, 119899 Moscow, RussiaV. N. KolobanovPhysical Faculty, Moscow State University, 119899 Moscow, RussiaD. SpasskyPhysical Faculty, Moscow State University, 119899 Moscow, Russia
2007en
ABI

Аннотация

Abstract Intrinsic emission of complex oxides with garnet structure was studied by means of the analyses of the time‐resolved luminescence spectra and decay kinetic for single crystals (SC) and single‐crystalline films (SCF) of Y 3 Al 5 O 12 (YAG) and Lu 3 Al 5 O 12 (LuAG) garnets under excitation by the pulse X‐ray and synchrotron radiation at 8–300 K. YAG and LuAG SC and SCF are characterized by significantly different concentration of the Y Al and Lu Al antisite defects (AD) due to the substantial difference in the conditions of their crystallization. For this reason, LuAG and YAG SC and SCF are very useful model objects for the study of nature of the intrinsic emission of these oxides, consisting of the excitons and AD luminescence. (© 2007 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)

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DOI
10.1002/pssb.200642431

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Цитирований: 3Использованных источников: 0
Показатели — AkademScholar