Gap-Inhomogeneity-Induced Electronic States in Superconducting<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>Bi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Sr</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>CaCu</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mrow><mml:mn>8</mml:mn><mml:mo>+</mml:mo><mml:mi>δ</mml:mi></mml:mrow></mml:msub></mml:math>

In this Letter, we analyze, using scanning tunneling spectroscopy, the density of electronic states in nearly optimally doped ${\mathrm{Bi}}_{2}{\mathrm{Sr}}_{2}{\mathrm{CaCu}}_{2}{\mathrm{O}}_{8+\ensuremath{\delta}}$ in zero magnetic field. Focusing on the superconducting gap, we find patches of what appear to be two different phases in a background of some average gap, one with a relatively small gap and sharp large coherence peaks and one characterized by a large gap with broad weak coherence peaks. We compare these spectra with calculations of the local density of states for a simple phenomenological model in which a $2{\ensuremath{\xi}}_{0}\ifmmode\times\else\texttimes\fi{}2{\ensuremath{\xi}}_{0}$ patch with an enhanced or suppressed $d$-wave gap amplitude is embedded in a region with a uniform average $d$-wave gap.

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