Scaling behavior of magnetoresistance and Hall resistivity in the altermagnet CrSb

The discovery of the altermagnet (AM) marks a significant advancement in magnetic materials, combining the characteristics of both ferromagnetism and antiferromagnetism. In this paper, we focus on CrSb, which has been verified to be an AM and to exhibit substantial spin splitting near the Fermi level. After successfully growing high-quality CrSb single crystals, we performed comprehensive magnetization, magnetoresistance (MR), and Hall resistivity measurements, along with the electronic structure, and Fermi-surface calculations, as well as magnetotransport property numerical simulations. An antiferromagnetic transition occurring at ${T}_{N}=712\phantom{\rule{0.28em}{0ex}}\mathrm{K}$ was reconfirmed. It was found that both experimental MR and Hall resistivity are consistent with the numerical simulation results, and exhibit obvious scaling behavior. The nonlinear Hall resistivity is due to its multiband structure, rather than an anomalous Hall effect. Especially, the scaling behavior in the Hall resistivity is first observed within an AM material. These findings demonstrate that the magnetotransport properties in CrSb originate from the intrinsic electronic structure and are dominated by the Lorentz force. Additionally, through a comparison of theory and experiment, we found that the magnetotransport properties calculated using the altermagnetic structure perfectly match the experimental data, while using a nonmagnetic structure does not align with the experimental results. This further confirms that CrSb is indeed an altermagnet.

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