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Growth and characterization of CdZnS thin film buffer layers by chemical bath deposition

Jiyon SongDepartment of Chemical Engineering, University of Florida, Gainesville, FL, USAShuguang LiDepartment of Chemical Engineering, University of Florida, Gainesville, FL, USASonghak YoonDepartment of Chemical Engineering, University of Florida, Gainesville, FL, USAW.K. KimDepartment of Chemical Engineering, University of Florida, Gainesville, FL, USAJihyun KimDepartment of Chemical Engineering, University of Florida, Gainesville, FL, USAJianjun ChenDepartment of Materials Science and Engineering, University of Florida, Gainesville, FL, USAV. CrăciunDepartment of Materials Science and Engineering, University of Florida, Gainesville, FL, USATimothy J. AndersonDepartment of Chemical Engineering, University of Florida, Gainesville, FL, USAO.D. CrisalleDepartment of Chemical Engineering, University of Florida, Gainesville, FL, USAF. RenDepartment of Chemical Engineering, University of Florida, Gainesville, FL, USA
2005en
ABI

Аннотация

In this paper we report the study of CdZnS thin films grown on the soda-lime glass (SLG) substrates by chemical bath deposition (CBD) process for buffer layer applications in CuGaSe/sub 2/ (CGS) solar cells. Structural, surface morphology, optical, and electrical properties of as-deposited CdZnS films were investigated by XRD, SEM, spectrophotometer, and four probes resistivity measurements as a function of Zn-composition in the solution. The CdZnS films have hexagonal structures. The grain size of CdZnS films was found to increase with increasing Zn-content in the solution. The films with 30% of Zn in the solution showed a better than 80% transmittance for wavelengths longer than 600 nm and film thickness less than 50 nm. The values of energy band gaps obtained are 2.40, 2.55, and 2.70 eV for Zn-content of 0, 30, and 50%, respectively. The resistivity of CdZnS films was found to increase as the Zn content increases.

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