Breaking the Doping Limit in Silicon by Deep Impurities
Mao WangTechnische Universität Dresden, 01062 Dresden, GermanyA. DebernardiCNR-IMM, sede Agrate Brianza, via Olivetti 2, I-20864 Agrate Brianza, ItalyY. BerencénHelmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, GermanyR. HellerHelmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, GermanyChi XuHelmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, GermanyYe YuanHelmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, GermanyYufang XieHelmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, GermanyR. BöttgerHelmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, GermanyL. RebohleHelmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, GermanyW. SkorupaHelmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, GermanyM. HelmHelmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, GermanyS. PrucnalHelmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, GermanyShengqiang ZhouHelmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
2019en
ABI
Аннотация
Increasing the free-carrier concentration in silicon is a pressing issue in modern electronics. The common shallow-level donors like P and As only permit electrically active doping up to 5\ifmmode\times\else\texttimes\fi{}10${}^{20}$ cm${}^{\ensuremath{-}3}$. The authors discover that, surprisingly, doping with deep-level Te donors can actually exceed this limit. Density-functional calculations unveil the microscopic mechanism behind this behavior: Substitutional Te dimers occupying adjacent Si lattice sites provide free electrons. This work offers an alternative route to realizing the ultrahigh $n$-type doping required for Si-based next-generation electronics, as well as infrared optoelectronics.
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