Статья

Blue Light-Emitting Diode Based on ZnO

Atsushi TsukazakiInstitute for Materials Research, Tohoku University, Sendai 980-8577, JapanMasashi KubotaInstitute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, JapanAkira OhtomoInstitute for Materials Research, Tohoku University, Sendai 980-8577, JapanTakeyoshi OnumaInstitute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, JapanKeita OhtaniLaboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, JapanHideo OhnoLaboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, JapanShigefusa F. ChichibuInstitute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, JapanMasashi KawasakiInstitute for Materials Research, Tohoku University, Sendai 980-8577, Japan

2005en

ABI

Аннотация

A near-band-edge bluish electroluminescence (EL) band centered at around 440 nm was observed from ZnO p – i – n homojunction diodes through a semi-transparent electrode deposited on the p -type ZnO top layer. The EL peak energy coincided with the photoluminescence peak energy of an equivalent p -type ZnO layer, indicating that the electron injection from the n -type layer to the p -type layer dominates the current, giving rise to the radiative recombination in the p -type layer. The imbalance in charge injection is considered to originate from the lower majority carrier concentration in the p -type layer, which is one or two orders of magnitude lower than that in the n -type one. The current-voltage characteristics showed the presence of series resistance of several hundreds ohms, corresponding to the current spread resistance within the bottom n -type ZnO. The employment of conducting ZnO substrates may solve the latter problem.

Перевод пока недоступен

Идентификаторы

DOI: 10.1143/jjap.44.l643

Цитирования и источники

Цитирований: 3Использованных источников: 0

Показатели — AkademScholar