Exciton and Biexciton Luminescence from Single GaN/AlN Quantum Dots in Nanowires
Julien RenardCEA-CNRS group “Nanophysique et Semiconducteurs”, INAC/SP2M,17 rue des Martyrs 38054 Grenoble Cedex 9, France, and CEA-LETI, MINATEC, 17 rue des Martyrs 38054 Grenoble Cedex 9, FranceRudeesun SongmuangCEA-CNRS group “Nanophysique et Semiconducteurs”, INAC/SP2M,17 rue des Martyrs 38054 Grenoble Cedex 9, France, and CEA-LETI, MINATEC, 17 rue des Martyrs 38054 Grenoble Cedex 9, FranceCatherine BougerolCEA-CNRS group “Nanophysique et Semiconducteurs”, INAC/SP2M,17 rue des Martyrs 38054 Grenoble Cedex 9, France, and CEA-LETI, MINATEC, 17 rue des Martyrs 38054 Grenoble Cedex 9, FranceB. DaudinCEA-CNRS group “Nanophysique et Semiconducteurs”, INAC/SP2M,17 rue des Martyrs 38054 Grenoble Cedex 9, France, and CEA-LETI, MINATEC, 17 rue des Martyrs 38054 Grenoble Cedex 9, FranceB. GayralCEA-CNRS group “Nanophysique et Semiconducteurs”, INAC/SP2M,17 rue des Martyrs 38054 Grenoble Cedex 9, France, and CEA-LETI, MINATEC, 17 rue des Martyrs 38054 Grenoble Cedex 9, France
2008en
ABI
Аннотация
We present a microphotoluminescence study of single GaN/AlN quantum dots embedded in single nanowires. At low excitation power, single exciton lines with full width at half-maximum as narrow as 1 meV are observed. The study of the excitation power dependence of the emission allows us to identify the biexciton transitions with binding energies ranging from 20 to 40 meV.
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