Статья

Negative Differential Resistance with Ultralow Peak-to-Valley Voltage Difference in Td-WTe<sub>2</sub>/2H-MoS<sub>2</sub> Heterostructure

Shida HuoState Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050, ChinaHengze QuSchool of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, ChinaFanying MengState Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, ChinaZhe ZhangState Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, ChinaZheyu YangState Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, ChinaShengli ZhangSchool of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, ChinaXiaodong HuState Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, ChinaEnxiu WuState Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050, China

2024en

ABI

Аннотация

Negative differential resistance (NDR) devices with a low peak-to-valley voltage difference (ΔV) exhibit a high cut off frequency and low power consumption efficiency, which is significant for fabricating high-performance oscillators. However, achieving an ultralow ΔV is challenging. In this work, we report the first construction of an NDR device utilizing a van der Waals heterostructure composed of semimetallic Td-WTe2 and semiconducting 2H-MoS2. Our findings reveal that the narrow energy region of the decreasing density of states (DOS) above the Fermi level of WTe2 acts as a narrow band gap, facilitating type-III band alignment with MoS2 and enabling band-to-band tunneling-based NDR transport. Notably, the NDR device exhibits an ultralow ΔV of approximately 0.01 V, which is at least an order of magnitude lower than previously reported values. This work not only introduces a new approach for NDR device fabrication but also provides new insights into the pivotal role of Td-WTe2 in NDR transport.

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Идентификаторы

DOI: 10.1021/acs.nanolett.4c03263

Цитирования и источники

Цитирований: 2Использованных источников: 0

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