Перейти к основному содержанию
AkademIndex

Продукты

Для разработчиков

AkademBaseОткрытый API экосистемы
Статья

One-Step Green Hydrothermal Synthesis of Few-Layer Graphene Oxide from Humic Acid

Guangxu HuangCollaborative Innovation Center of Coal Work Safety of Henan Province, Jiaozuo 454003, ChinaWeiwei KangSchool of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189, ChinaQianhao GengCollege of Chemistry and Chemical Engineering, Henan Polytechnic University, Jiaozuo 454003, ChinaBaolin XingCollege of Chemistry and Chemical Engineering, Henan Polytechnic University, Jiaozuo 454003, ChinaQuanrun LiuCollege of Chemistry and Chemical Engineering, Henan Polytechnic University, Jiaozuo 454003, ChinaJianbo JiaCollege of Chemistry and Chemical Engineering, Henan Polytechnic University, Jiaozuo 454003, ChinaChuanxiang ZhangCollege of Chemistry and Chemical Engineering, Henan Polytechnic University, Jiaozuo 454003, China
2018en
ABI

Аннотация

The conventional synthesis route of graphene oxide (GOG), based on Hummers method, suffers from explosion risk, environmental concerns and a tedious synthesis process, which increases production costs and hinders its practical applications. Herein, we report a novel strategy for preparing few-layer graphene oxide (GOH) from humic acid via simple hydrothermal treatment. The formation of GOH is mainly attributed to the hydrolysis, oxidation and aromatization of humic acid under hydrothermal conditions. The as-prepared few-layer GOH has typical morphology (thin and crumpled sheets with the thickness of ~3.2 nm), crystal structure (a Raman ID/IG ratio of 1.09) and chemical composition (an X-ray Photoelectron Spectroscopy (XPS) O/C atomic ratio of 0.36) of few-layer GOG. The thermally reduced GOH (r-GOH) delivers considerable area capacitance of 28 µF·cm−2, high rate capability and low electrochemical resistance as supercapacitor electrodes. The described hydrothermal process shows great promise for the cheap, green and efficient synthesis of few-layer graphene oxide for advanced applications.

Перевод пока недоступен

Идентификаторы

Цитирования и источники

Цитирований: 2Использованных источников: 0