Работы, цитирующие эту работу

Работ: 4

Работа: Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide

1. Comparison of 2D and 3D p-n Junction Differential Conductance and Diffusion Capacitance

   М. Г. Дадамирзаев, Mamura Odiljonovna Kosimova, S. R. Boydedayev +1

   СтатьяGraphene research and applicationsEast European Journal of Physics2024Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.338276

2. In situ degradation studies of two-dimensional WSe₂–graphene heterostructures

   B. Wang, Sarah M. Eichfield, Dixiong Wang +2

   Статья2D Materials and ApplicationsNanoscale2015Цитирований: 0

   ABIABI:AkademIndex/openalex/2015.article.000107

3. Vertical Al₂Se₃/MoSe₂ heterojunction on sapphire synthesized using ion beam

   Hsu‐Sheng Tsai, Jhe‐Wei Liou, Yi-Chung Wang +6

   Статья2D Materials and ApplicationsRSC Advances2017Цитирований: 0

   ABIABI:AkademIndex/openalex/2017.article.000210

4. Alteration of quantum capacitance of 2D metal oxide semiconductor field-effect transistors under the effect of microwave fields

   G. Gulyamov, M.G. Dadamirzayev, Mamura Odiljonovna Kosimova +1

   СтатьяQuantum and electron transport phenomenaResults in Optics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.001414