NH<sub>2</sub>CH═NH<sub>2</sub>PbI<sub>3</sub>: An Alternative Organolead Iodide Perovskite Sensitizer for Mesoscopic Solar Cells
Shuping PangQingdao Key Lab
of Solar Energy Utilization and Energy Storage Technology, Qingdao
Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101, People’s Republic of ChinaHao HuQingdao Key Lab
of Solar Energy Utilization and Energy Storage Technology, Qingdao
Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101, People’s Republic of ChinaJiliang ZhangDepartment
of Physics and Materials Science, City University of Hong Kong, Hong Kong SARSiliu LvQingdao Key Lab
of Solar Energy Utilization and Energy Storage Technology, Qingdao
Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101, People’s Republic of ChinaYaming YuCollege
of Materials Science and Engineering, Huaqiao University, Xiamen 361021, People’s Republic of ChinaFeng WeiGeneral Research Institute for Nonferrous Metals, Beijing 100088, People’s Republic of ChinaTianshi QinIan Wark Laboratory, CSIRO Materials Science & Engineering, Clayton South, Victoria 3168, AustraliaHongxia XuQingdao Key Lab
of Solar Energy Utilization and Energy Storage Technology, Qingdao
Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101, People’s Republic of ChinaZhihong LiuQingdao Key Lab
of Solar Energy Utilization and Energy Storage Technology, Qingdao
Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101, People’s Republic of ChinaGuanglei CuiQingdao Key Lab
of Solar Energy Utilization and Energy Storage Technology, Qingdao
Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101, People’s Republic of China
2014en
ABI
Аннотация
A new nearly cubic NH2CH═NH2PbI3 (FAPbI3) perovskite was synthesized for the mesoscopic solar cells. The measured band gap of bulk FAPbI3 is 1.43 eV and it is therefore potentially superior than the CH3NH3PbI3 (MAPbI3) as the light harvester. A homogeneous FAPbI3 perovskite layer was deposited on the TiO2 surface by utilizing the in situ dipping technology. As a result, a high efficiency of 7.5% was achieved using P3HT as the hole transport material. The nearly cubic crystal structure and appropriate band gap render this new FAPbI3 perovskite extremely attractive for next generation high-efficiency low-cost solar cells.
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