Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors
Xiaolin LiDepartment of Chemistry and Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305, USAXinran WangDepartment of Chemistry and Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305, USALi ZhangDepartment of Chemistry and Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305, USASang‐Won LeeDepartment of Chemistry and Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305, USAHongjie DaiDepartment of Chemistry and Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305, USA
2008en
ABI
Аннотация
We developed a chemical route to produce graphene nanoribbons (GNR) with width below 10 nanometers, as well as single ribbons with varying widths along their lengths or containing lattice-defined graphene junctions for potential molecular electronics. The GNRs were solution-phase-derived, stably suspended in solvents with noncovalent polymer functionalization, and exhibited ultrasmooth edges with possibly well-defined zigzag or armchair-edge structures. Electrical transport experiments showed that, unlike single-walled carbon nanotubes, all of the sub-10-nanometer GNRs produced were semiconductors and afforded graphene field effect transistors with on-off ratios of about 10(7) at room temperature.
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