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Properties of Image-Potential-Induced Surface States of Insulators

Milton W. ColeDepartment of Physics and The James Franck Institute, The University of Chicago, Chicago, Illinois 60637
1970en
ABI

Аннотация

The strongly repulsive interaction between electrons and He or Ne atoms, or ${\mathrm{H}}_{2}$ molecules, gives rise to the existence of electronic states localized near a condensed medium consisting of such units. The attractive image potential binds the electrons weakly near the surface; the binding energy ranges from 0.4 meV for liquid ${\mathrm{He}}^{3}$ to 22 meV for solid ${\mathrm{D}}_{2}$. Motion parallel to the surface is nearly free-electron---like. An exploration of the interaction between electrons and oscillations of the medium's surface reveals a breakdown in perturbation theory which may be remedied by correct treatment of long-wavelength oscillations. A determination is made of the temperature-dependent mobility of electrons for fields parallel to the surface. We find that the surface waves scatter more for the liquid than for the solid. A transition occurs in the mobility as the temperature increases to a point where scattering by atoms of the vapor becomes dominant over other mechanisms. A second transition occurs when the electron in the vapor becomes localized in the bubble state, and the present treatment loses its validity.

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