The impurity photovoltaic (IPV) effect in wide‐bandgap semiconductors: an opportunity for very‐high‐efficiency solar cells?
G. BeaucarnePresently with Pacific Solar Pty Ltd, 82–86 Bay Street, Sydney 2019, NSW, AustraliaAndrew S. BrownSpecial Research Centre for Third Generation Photovoltaics, University of New South Wales, Sydney 2052, NSW, AustraliaMark KeeversPresently with Pacific Solar Pty Ltd, 82–86 Bay Street, Sydney 2019, NSW, AustraliaRichard CorkishSpecial Research Centre for Third Generation Photovoltaics, University of New South Wales, Sydney 2052, NSW, AustraliaMartin A. GreenSpecial Research Centre for Third Generation Photovoltaics, University of New South Wales, Sydney 2052, NSW, Australia
2002en
ABI
Аннотация
Abstract Following recent progress in the study of limiting efficiencies of photovoltaic devices with multiple energy levels, we suggest using the impurity photovoltaic (IPV) effect in wide‐bandgap semiconductors as a means to achieve very‐high‐efficiency solar cells. We discuss the requirements for a high‐efficiency IPV device and review some of the material systems that could be used. As a case study, we investigate theoretically β‐SiC IPV solar cells with a model based on a modified Shockley–Read–Hall theory. The high‐efficiency potential is confirmed and the important issues for implementation are presented and discussed. Copyright © 2002 John Wiley &; Sons, Ltd.
Перевод пока недоступен
Идентификаторы
Цитирования и источники
Цитирований: 15Использованных источников: 0