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Realization of conductive InAs nanotubes based on lattice-mismatched InP∕InAs core-shell nanowires

Premila MohanHokkaido University Research Center for Integrated Quantum Electronics (RCIQE), Graduate School of Information Science and Technology, , North 13 West 8, Sapporo 060-8628, JapanJunichi MotohisaHokkaido University Research Center for Integrated Quantum Electronics (RCIQE), Graduate School of Information Science and Technology, , North 13 West 8, Sapporo 060-8628, JapanTakashi FukuiHokkaido University Research Center for Integrated Quantum Electronics (RCIQE), Graduate School of Information Science and Technology, , North 13 West 8, Sapporo 060-8628, Japan
2006en
ABI

Аннотация

We report the realization of ordered arrays of single-crystalline InAs nanotubes by a simple pure-eptiaxial approach. The process involved the fabrication of lattice-mismatched InP∕InAs core-shell nanowires using selective area metalorganic vapor phase epitaxy on InP (111)A substrates. The subsequent removal of the InP core resulted in vertically aligned InAs nanotubes which were highly uniform with well-defined features and controllable dimensions. Transmission electron microscopy studies confirmed that the nanotubes were single-crystalline with wurtzite crystal structure and temperature-dependent transport measurements revealed that they were conductive without any intentional doping. The realization of such conductive InAs nanotubes opens up new possibilities for both fundamental studies and future device applications.

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Цитирований: 2Использованных источников: 0