MBE growth of GaP on a Si substrate
M. S. SobolevSt. Petersburg Academic University, Nanotechnology Research and Education Centre, Russian Academy of Sciences, St. Petersburg, 194021, RussiaА. А. ЛазаренкоSt. Petersburg Academic University, Nanotechnology Research and Education Centre, Russian Academy of Sciences, St. Petersburg, 194021, RussiaE. V. NikitinaSt. Petersburg Academic University, Nanotechnology Research and Education Centre, Russian Academy of Sciences, St. Petersburg, 194021, RussiaE. V. PirogovSt. Petersburg Academic University, Nanotechnology Research and Education Centre, Russian Academy of Sciences, St. Petersburg, 194021, RussiaА.С. ГудовскихSt. Petersburg Academic University, Nanotechnology Research and Education Centre, Russian Academy of Sciences, St. Petersburg, 194021, RussiaA. Yu. EgorovSt. Petersburg Academic University, Nanotechnology Research and Education Centre, Russian Academy of Sciences, St. Petersburg, 194021, Russia
2015en
ABI
Аннотация
It is shown that single-crystal GaP buffer layers can be formed on a Si substrate by molecular-beam epitaxy, with the “migration-enhanced epitaxy” procedure applied in the stage in which the nucleating layer is formed. When a GaP layer is produced on a p-type silicon substrate, a p-n junction is created in a natural way between the p-Si substrate and the surface n-Si layer produced by the diffusion of phosphorus into the substrate during the course of the epitaxial growth of GaP. This p-n junction can be used as the first junction of a silicon-based multijunction photovoltaic converter.
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