Kinetic theory of negative magnetoresistance as an alternative to weak localization in semiconductors
Аннотация
A time-independent solution to the kinetic equation for the one-electron density matrix at an arbitrary magnetic field and linear in the electric field has been obtained within the nonequilibrium electron gas approximation. The case of scattering on deformation potential is considered. Expressions for the conductivity tensor are obtained in the form of sums over the magnetic quantization states. They are shown to coincide with classical ones in the absence of a magnetic field. Under weak magnetic fields, the magnetoresistance is positive when electron mobility is high and negative when it is low. It changes sign as the field increases when the mobility is intermediate. The magnetoresistance of the degenerate electron gas is nonzero. The conductivity tensor describes its oscillations in the quantizing magnetic field. Their amplitude and the magnetoresistance mean values increase with increasing magnetic field and mobility.
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