Статья

One-Dimensional Electrical Contact to a Two-Dimensional Material

Lei WangDepartment of Electrical Engineering, Columbia University, New York, NY 10027, USAInanc MericDepartment of Electrical Engineering, Columbia University, New York, NY 10027, USAPinshane Y. HuangSchool of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USAQun GaoDepartment of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611, USAYuanda GaoDepartment of Mechanical Engineering, Columbia University, New York, NY 10027, USAHuyen T. T. TranDepartment of Chemistry, Columbia University, New York, NY 10027, USATakaaki TaniguchiNational Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, JapanKenji WatanabeNational Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, JapanLuis M. CamposDepartment of Chemistry, Columbia University, New York, NY 10027, USADavid A. MullerSchool of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USAJing GuoDepartment of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611, USAPhilip KimDepartment of Physics, Columbia University, New York, NY 10027, USAJames HoneDepartment of Mechanical Engineering, Columbia University, New York, NY 10027, USAKenneth L. ShepardDepartment of Electrical Engineering, Columbia University, New York, NY 10027, USACory R. DeanDepartment of Electrical Engineering, Columbia University, New York, NY 10027, USA

2013en

ABI

Аннотация

Heterostructures based on layering of two-dimensional (2D) materials such as graphene and hexagonal boron nitride represent a new class of electronic devices. Realizing this potential, however, depends critically on the ability to make high-quality electrical contact. Here, we report a contact geometry in which we metalize only the 1D edge of a 2D graphene layer. In addition to outperforming conventional surface contacts, the edge-contact geometry allows a complete separation of the layer assembly and contact metallization processes. In graphene heterostructures, this enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-temperature mobility comparable to the theoretical phonon-scattering limit. The edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials.

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Идентификаторы

DOI: 10.1126/science.1244358

Цитирования и источники

Цитирований: 2Использованных источников: 0

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