Room temperature magnetoelectric control of micromagnetic structure in iron garnet films
А. С. ЛоггиновM. V. Lomonosov Moscow State University 1 Department of Physics, , Leninskie gori, Moscow 119992, RussiaG. A. MeshkovM. V. Lomonosov Moscow State University 1 Department of Physics, , Leninskie gori, Moscow 119992, RussiaА. В. НиколаевM. V. Lomonosov Moscow State University 1 Department of Physics, , Leninskie gori, Moscow 119992, RussiaЕ. П. НиколаеваM. V. Lomonosov Moscow State University 1 Department of Physics, , Leninskie gori, Moscow 119992, RussiaA. P. PyatakovM. V. Lomonosov Moscow State University 1 Department of Physics, , Leninskie gori, Moscow 119992, RussiaА. К. ЗвездинA. M. Prokhorov General Physics Institute 2 , 38, Vavilova St., Moscow 119991, Russia
2008en
ABI
Аннотация
The effect of magnetic domain wall motion induced by electric field is observed in epitaxial iron garnet films grown on (210) and (110) gadolinium-gallium garnet substrates. The displacement of the domain wall changes to the opposite at the reversal of electric field polarity, and it is independent of the magnetic polarity of the domains. Dynamic observation of the domain wall motion in 400 V electric pulses gives the domain wall velocity of about 50 m/s. The same velocity is achieved in a magnetic field pulse of about 50 Oe. This type of magnetoelectric effect is implemented in single phase material at room temperature.
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