Redistribution of phosphorus implanted into silicon doped heavily with boron
E. G. TishkovskiǐInstitute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, RussiaV.I. ObodnikovInstitute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, RussiaA. A. TaskinInstitute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, RussiaK. V. FeklistovInstitute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, RussiaV. G. SeryapinInstitute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia
2000en
ABI
Аннотация
The special features of redistribution of phosphorus implanted into silicon wafers with a high concentration of boron (N B=2.5×1020 cm−3) were studied. It is shown that, in silicon initially doped heavily with boron, the broadening of concentration profiles of phosphorus as a result of postimplantation annealing for 1 h in the temperature range of 900–1150°C is significantly less than in the case of lightly doped silicon. The results are interpreted in terms of the impurity-impurity interaction with the formation of stationary boron-phosphorus pairs. The binding energy of boron-phosphorus complexes in silicon was estimated at 0.6–0.8 eV.
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