High performance 20 nm GaSb/InAs junctionless tunnel field effect transistor for low power supply

We present a GaSb/InAs junctionless tunnel FET and investigate its static device characteristics. The proposed structure presents tremendous performance at a very low supply voltage of 0.4 V. The key idea is to the present device architecture, which can be exploited as a digital switching device for sub 20 nm technology. Numerical simulations resulted in an IOFF of ∼8 × 10−17 A/μm, ION of ∼9 μA/μm, ION/IOFF of ∼1 × 1011, subthreshold slope of 9.33 mV/dec and DIBL of ∼87 mV/V for GaSb/InAs JLTFET at a temperature of 300 K, gate length of 20 nm, HfO2 gate dielectric thickness of 2 nm, film thickness of 10 nm, low-k spacer thickness of 10 nm and VDD of 0.4 V.

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