Wet etching and passivation of GaSb-based very long wavelength infrared detectors
Xue-Yue XuState Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, CHINAJunkai JiangState Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, CHINAWei‐Qiang ChenState Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, CHINASu-Ning CuiState Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, CHINAWenguang ZhouState Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, CHINANong LiState Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, CHINAFaran ChangState Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, CHINAGuowei WangState Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, CHINAYingqiang XuState Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, CHINADongwei JiangState Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, CHINADonghai WuState Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, CHINAHongyue HaoState Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, CHINAZhichuan NiuState Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, CHINA
2022en
ABI
Аннотация
The etching and passivation processes of very long wavelength infrared (VLWIR) detector based on the InAs/GaSb/AlSb type-II superlattice have been studied. By studying the effect of each component in the citric acid solution (citric acid, phosphoric acid, hydrogen peroxide, deionized water), the best solution ratio is obtained. After comparing different passivation materials such as sulfide + SiO 2 , Al 2 O 3 , Si 3 N 4 and SU8, it is found that SU8 passivation can reduce the dark current of the device to a greater degree. Combining this wet etching and SU8 passivation, the R 0 A of VLWIR detector with a mesa diameter of 500 μm is about 3.6 Ω⋅cm 2 at 77 K.
Перевод пока недоступен
Идентификаторы
Цитирования и источники
Цитирований: 2Использованных источников: 0