Статья

Theoretical analysis and modelling of degradation for III–V lasers on Si

Jianzhuo LiuChangchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of ChinaMingchu TangDepartment of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United KingdomHuiwen DengDepartment of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United KingdomSamuel ShuttsSchool of Physics and Astronomy, Cardiff University, Cardiff CF10 3AT, United KingdomLingfang WangCollege of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310007, People's Republic of ChinaPeter M. SmowtonSchool of Physics and Astronomy, Cardiff University, Cardiff CF10 3AT, United KingdomChao‐Yuan JinZhejiang Lab, Hangzhou 311121, People's Republic of ChinaSiming ChenDepartment of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United KingdomAlywn SeedsDepartment of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United KingdomHuiyun LiuDepartment of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom

2022en

ABI

Аннотация

Abstract InAs/GaAs quantum-dot (QD) lasers offer a promising method to realise Si-based on-chip light sources. However, the monolithic integration of III–V materials on Si introduces a high density of threading dislocations (TDs), which limits the performance of such a laser device in terms of device lifetime. Here, we proposed a kinetic model including a degradation term and a saturation term to simulate the degradation process caused by the TDs in the early stage of laser operation. By using a rate equation model, the current density in the wetting layer, where the TDs concentrate, is calculated. We compared the rate of degradation of QD lasers with different cavity lengths and of quantum-well lasers, where both are directly grown on Si substrates, by varying the fitting parameters in the calculation of current densities in the kinetic model.

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Идентификаторы

DOI: 10.1088/1361-6463/ac83d3

Цитирования и источники

Цитирований: 2Использованных источников: 0

Показатели — AkademScholar