Synthesis of buried SiC using an energetic ion beam
Y. S. KatharriaInter-University Accelerator Centre, Aruna Asaf Ali Marg, PO Box-10502, New Delhi-110 067, IndiaSandeep KumarInter-University Accelerator Centre, Aruna Asaf Ali Marg, PO Box-10502, New Delhi-110 067, IndiaF SinghInter-University Accelerator Centre, Aruna Asaf Ali Marg, PO Box-10502, New Delhi-110 067, IndiaJ.C. PivinCSNSM-IN2P3, Bâtiment 108, 91405, Orsay Campus, FranceD. KanjilalInter-University Accelerator Centre, Aruna Asaf Ali Marg, PO Box-10502, New Delhi-110 067, India
2006en
ABI
Аннотация
Buried silicon carbide (SiC) was synthesized at room temperature using implantation of 150 keV C+ ions in n-type Si (100) and Si (111) substrates. The dose of implanted C+ was varied from 4 × 1017 to 8 × 1017 cm-2. Post-implantation annealing at 1000° C for 30 min was carried out in inert ambience. Rutherford backscattering spectroscopy, x-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy and Raman spectroscopy were employed to characterize the samples. FTIR and Raman spectroscopic techniques in combination with the XRD analysis confirmed the development of the β-SiC phase in the samples. The average size of the SiC precipitates was estimated to be 9 nm from XRD analysis.
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