Cyclotron resonance in doped and undoped InAs/AlSb heterostructures with quantum wells
V. Ya. AleshkinInstitute for the Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, RussiaV. I. GavrilenkoInstitute for the Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, RussiaA. V. IkonnikovInstitute for the Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, RussiaYu. G. SadofyevDepartment of Electrical Engineering and Center for Solid-State Electronic Research, Arizona State University, Tempe, AZ 85287, USAJ. P. BirdDepartment of Electrical Engineering and Center for Solid-State Electronic Research, Arizona State University, Tempe, AZ 85287, USAS. R. JohnsonDepartment of Electrical Engineering and Center for Solid-State Electronic Research, Arizona State University, Tempe, AZ 85287, USAY. -H. ZhangDepartment of Electrical Engineering and Center for Solid-State Electronic Research, Arizona State University, Tempe, AZ 85287, USA
2005en
ABI
Аннотация
Backward-wave tubes are used to study the spectra of cyclotron resonance in the range of 150–700 GHz in the AlSb/InAs/AlSb heterostructures with quantum wells and with an electron concentration in a two-dimensional electron gas ranging from 2.7 × 1011 to 8 × 1012 cm−2 at 4.2 K. A significant increase in the cyclotron mass (from 0.03m 0 to 0.06m 0) is observed as the electron concentration (and, correspondingly, the Fermi energy) increases, which is typical of semiconductors with a nonparabolic dispersion relation. The results obtained are in satisfactory agreement with theoretical calculations of cyclotron masses at the Fermi level in the context of the simplified Kane model.
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