Статья

Terahertz HgTe Nanocrystals: Beyond Confinement

Nicolas GoubetLPEM, ESPCI Paris, PSL University, CNRS, F-75005 Paris, FranceAmardeep JagtapSorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, FranceClément LivacheLPEM, ESPCI Paris, PSL University, CNRS, F-75005 Paris, FranceBertille MartinezLPEM, ESPCI Paris, PSL University, CNRS, F-75005 Paris, FranceHervé PortalèsSorbonne Université, CNRS, De la Molécule aux Nano-objets: Réactivité, Interactions et Spectroscopies, MONARIS, F-75005 Paris, FranceXiang XuLPEM, ESPCI Paris, PSL University, CNRS, F-75005 Paris, FranceR. P. S. M. LoboLPEM, ESPCI Paris, PSL University, CNRS, F-75005 Paris, FranceBenoît DubertretLPEM, ESPCI Paris, PSL University, CNRS, F-75005 Paris, FranceEmmanuel LhuillierSorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France

2018en

ABI

Аннотация

We report the synthesis of nanocrystals with an optical feature in the THz range. To do so, we develop a new synthetic procedure for the growth of HgTe, HgSe, and HgS nanocrystals, with strong size tunability from 5 to 200 nm. This is used to tune the absorption of the nanocrystals all over the infrared range up to terahertz (from 2 to 65 μm for absorption peak and even 200 μm for cutoff wavelength). The interest for this procedure is not limited to large sizes since for small objects we demonstrate low aggregation and good shape control (i.e., spherical object) while using nonexpansive and simple mercury halogenide precursors. By integrating these nanocrystals into an electrolyte-gated transistor, we evidence a change of carrier density from p-doped to n-doped as the confinement is vanishing.

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Идентификаторы

DOI: 10.1021/jacs.8b02039

Цитирования и источники

Цитирований: 3Использованных источников: 0

Показатели — AkademScholar