Chemical and structural aspects of annealed ZnSe/GaAs(001) heterostructures
D. H. MoscaDepartamento de Fı́sica—UFPR, Centro Politécnico C. P. 19091, 81531-990 Curitiba PR, BrazilW. H. SchreinerDepartamento de Fı́sica—UFPR, Centro Politécnico C. P. 19091, 81531-990 Curitiba PR, BrazilEdson Massayuki KakunoDepartamento de Fı́sica—UFPR, Centro Politécnico C. P. 19091, 81531-990 Curitiba PR, BrazilI. MazzaroDepartamento de Fı́sica—UFPR, Centro Politécnico C. P. 19091, 81531-990 Curitiba PR, BrazilE. F. da SilveiraDepartamento de Fı́sica—UFPR, Centro Politécnico C. P. 19091, 81531-990 Curitiba PR, BrazilV. H. EtgensLaboratoire de Minéralogie et de Cristallographie de Paris—CNRS, Université Paris VI et VII, 4 Place Jussieu, 75252 Paris Cedex, FranceM. EddriefLaboratoire de Minéralogie et de Cristallographie de Paris—CNRS, Université Paris VI et VII, 4 Place Jussieu, 75252 Paris Cedex, FranceG. ZanelattoDepartamento de Fı́sica, Universidade Federal de São Carlos, C. P. 676, 13565-905 São Carlos SP, BrazilJ. C. GalzeraniDepartamento de Fı́sica, Universidade Federal de São Carlos, C. P. 676, 13565-905 São Carlos SP, Brazil
2002en
ABI
Аннотация
The thermal evolution of a ZnSe epilayer grown by molecular beam epitaxy on GaAs(001) has been studied by high resolution x-ray diffraction as well as photoelectron and Raman spectroscopies. Sequential annealing of a relaxed epilayer reveals a fast migration of Ga towards the ZnSe cap layer with a significant accumulation of As atoms near the ZnSe-reacted interface. A Ga2Se3 compound appears as a predominant byproduct whereas Zn atoms are probably diffusing from the reacted interface into the GaAs substrate.
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