GaAs/Ge heterostructure photovoltaic cells fabricated by a combination of MOCVD and zinc diffusion techniques
V. M. AndreevIoffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, RussiaВ. П. ХвостиковIoffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, RussiaN. A. KalyuzhnyĭIoffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, RussiaS. S. TitkovIoffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, RussiaО. А. ХвостиковаIoffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, RussiaM. Z. ShvartsIoffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia
2004en
ABI
Аннотация
Ge photovoltaic cells based on GaAs/Ge heterostructures have been produced by a combination of metal-organic chemical-vapor deposition and Zn diffusion from the gas phase. The cells are characterized by increased photocurrent and open-circuit voltage. The calculated efficiency of a Ge solar cell under concentrated sunlight exceeds 5.5%. The photocurrent achieved in a Ge photovoltaic cell is close to that obtained in GaAs solar cells under similar conditions of illumination with air-mass-zero (AM0) sunlight, which enables one to design high-efficiency concentrator-type cascade solar cells with a GaAs top cell and a Ge bottom cell.
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