Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon
Michael D. ThompsonDepartment
of Physics, Lancaster University, Lancaster, LA1 4YB, United KingdomAiyeshah AlhodaibDepartment
of Physics, Lancaster University, Lancaster, LA1 4YB, United KingdomAdam P. CraigDepartment
of Physics, Lancaster University, Lancaster, LA1 4YB, United KingdomAlexander RobsonDepartment
of Physics, Lancaster University, Lancaster, LA1 4YB, United KingdomA. AzizDepartment
of Physics, Lancaster University, Lancaster, LA1 4YB, United KingdomA. KrierDepartment
of Physics, Lancaster University, Lancaster, LA1 4YB, United KingdomJohannes SvenssonElectrical
and Information Technology, Lund University, Box 118, SE-221 00 Lund, SwedenLars‐Erik WernerssonElectrical
and Information Technology, Lund University, Box 118, SE-221 00 Lund, SwedenAna M. SánchezDepartment
of Physics, University of Warwick, Coventry CV4 7AL, United KingdomAndrew MarshallDepartment
of Physics, Lancaster University, Lancaster, LA1 4YB, United Kingdom
2015en
ABI
Аннотация
Axially doped p-i-n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm(2) and a 20% cutoff of 2.3 μm at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III-V semiconductors with silicon technology.
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