Electrical properties of field-effect transistors based on C60 nanowhiskers
Kenichi OgawaChiba University Department of Electronics and Mechanical Engineering, , 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, JapanTomohiro KatoChiba University Department of Electronics and Mechanical Engineering, , 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, JapanAsato IkegamiChiba University Department of Electronics and Mechanical Engineering, , 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, JapanH TsujiChiba University Department of Electronics and Mechanical Engineering, , 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, JapanNobuyuki AokiChiba University Department of Electronics and Mechanical Engineering, , 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, JapanYuichi OchiaiChiba University Department of Electronics and Mechanical Engineering, , 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, JapanF. BirdThe State University of New York Department of Electrical Engineering, University at Buffalo, , Buffalo, New York 14260-1920
2006en
ABI
Аннотация
We fabricate field-effect transistors (FETs) based on C60 nanowhiskers (C60 NWs) and investigate their structural and electrical properties. Thermally annealed C60 NWs show x-ray powder-diffraction spectra that are consistent with a similar fcc structure to that of C60 bulk crystals, although with a slightly reduced lattice constant (a=13.9Å). The C60 NW-FETs exhibit n-channel, normally-on, properties (or FETs) and their carrier mobility is estimated to be 2×10−2cm2∕Vs under vacuum conditions at room temperature.
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