Работы, цитирующие эту работу

Работ: 2

Работа: Lateral MoS₂ p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics

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   Статья2D Materials and ApplicationsRSC Advances2017Цитирований: 0

   ABIABI:AkademIndex/openalex/2017.article.000210

2. Fabrication of photodiodes based on graphene oxide (GO) doped lanthanum hexaboride (LaB6) nanocomposites

   Mesut Yalçın, Abdullah G. Al‐Sehemi, İbrahi̇m Erol +5

   СтатьяElectronic and Structural Properties of OxidesDiamond and Related Materials2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.article.001254