Effect of deep levels on current excitation in 6H-SiC diodes

The results of an experimental study of deep levels in the p-base of 6H-SiC diodes are presented. A deep level of unknown origin, with ionization energy E c -1.45 eV, acts as an effective recombination center for minority carriers, and controls recombination processes. A level with ionization energy E c -0.16 eV is attributed to a nitrogen donor impurity. Electron capture and thermal activation processes associated with this level substantially extend the duration of current relaxation in the p-n junction.

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