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An Electrically Tuned Solid‐State Thermal Memory Based on Metal–Insulator Transition of Single‐Crystalline VO<sub>2</sub> Nanobeams

Rongguo XieCentre for Computational Science and Engineering (CCSE), National University of Singapore, Singapore, 117456, Republic of SingaporeCong Tinh BuiNUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore, 117456, Republic of SingaporeBinni VargheseDepartment of Physics, National University of Singapore, Singapore, 117542, Republic of SingaporeQingxin ZhangInstitute of MicroelectronicsChorng Haur SowDepartment of Physics, National University of Singapore, Singapore, 117542, Republic of SingaporeBaowen LiBaowen Li, Department of Physics, National University of Singapore, Singapore, 117542, Republic of SingaporeJohn T. L. ThongBaowen Li, Department of Physics, National University of Singapore, Singapore, 117542, Republic of Singapore
2011en
ABI

Аннотация

Abstract A solid‐state thermal memory that can store and retain thermal information with temperature states as input and output is demonstrated experimentally. A single‐crystal VO 2 nanobeam is used, undergoing a metal–insulator transition at ∼340 K, to obtain a nonlinear and hysteresis response in temperature. It is shown that the application of a voltage bias can substantially tune the characteristics of the thermal memory, to an extent that the heat conduction can be increased ∼60%, and the output HIGH/LOW temperature difference can be amplified over two orders of magnitude compared to an unbiased device. The realization of a solid‐state thermal memory combined with an effective electrical control thus allows the development of practical thermal devices for nano‐ to macroscale thermal management.

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