Radiation-sensitivity enhancement and annealing variation in densified, amorphous<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">SiO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>

The influence of $^{60}\mathrm{Co}$ \ensuremath{\gamma} radiation on densified samples of wet and dry amorphous silica has been studied through the creation and annealing of three intrinsic defects. Radiation sensitivity for oxygen-vacancy creation is enhanced by nearly 2 orders of magnitude in samples densified by only 3%. In general, defect creation efficiency is three to four times larger in wet silica than in dry both in the densified and undensified forms. Diffusion or thermal detrapping models for oxygen-vacancy annealing both suggest the activation energy for annealing increases by 0.6 to 1.0 eV when samples are densified by \ensuremath{\sim}16%. Creation of the peroxy radical through transformation of oxygen-vacancy centers is discussed.

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