Defect structure and electronic donor levels in stannic oxide crystals
Sherry D. SamsonDepartment of Electrical Engineering and Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139Clifton G. FonstadDepartment of Electrical Engineering and Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
1973en
ABI
Аннотация
By measuring the conductivity of stannic oxide crystals as a function of oxygen partial pressure at elevated temperatures, it is shown that the dominant native defect in SnO2 is a doubly ionizable oxygen vacancy. Both donor levels of this defect, the first 30 meV deep and the second 150 meV deep, are identified and a model is presented that explains previous results. The behavior in hydrogen is contrasted to that in oxygen, and preliminary results are presented indicating that hydrogen introduces a donor 50 meV deep.
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