Role of non-uniform channel doping in improving the nanoscale JL DG MOSFET reliability against the self-heating effects
H. FerhatiLEA, Department of Electronics, University of Batna, Batna 05000, AlgeriaFouzi DouakDepartment of Industrial Engineering, University Abbes Laghrour Khenchela, Khenchela 40004, AlgeriaF. DjeffalLEA, Department of Electronics, University of Batna, Batna 05000, Algeria
2017en
ABI
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