Characterization of Phosphoric Acid Doped N-type Silicon Thin Films Printed on ITO Coated PET Substrate

In this paper n-type polycrystalline silicon thin films deposited on ITO coated polyethylene terephthalate (PET) substrate by screen printing technique have been studied. The phosphoric acid with different concentration used as doping source to create n-type silicon powder which is dissolved in solvent to obtain n- type silicon pastes have three different doping concentration and constant viscosity. These pastes used to print n-type polycrystalline silicon thin films with thicknesses of 611 ± 8 nm for etch and different phosphorus doping concentrations. Among the techniques applied to analyze the properties of poly-Si thin layers to evaluate the effect doping variation. X-ray diffraction (XRD) technique was used for the determination of the crystallites size (D) and the stress in poly-Si thin films. The surface morphology and roughness carried out by Scanning electron microscopy (SEM) and atomic force microscopy (AFM). Thin film components elements detected by (EDX) attached with SEM system. The electrical properties such as resistivity, carrier concentration and Hall mobility were carried out by Hall Effect measurements. Optical transmittance and the transmittance ratio and others optical properties of the films are reported. Details on the sample preparations and experimental details will be presented.

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