Influence of preliminary ion bombardment on the formation of Co and CoSi-=SUB=-2-=/SUB=- nanofilms on Si surface during solid-phase deposition

In this work, to obtain ordered nanophases of Co and CoSi 2 , nuclei are preliminarily created on the Si surface by bombardment with Ar + ions with E 0 =0.5 keV and D=8· 10 13 cm -2 . It was found that a narrow band gap (E g ~ 0.3 eV) appears in the band structure at the Co layer thickness of less than 3 ML. The metallic properties of the Co film manifest themselves at a thickness of more than 4-5 ML. Heating the Co/Si(111) system at T=900 K leads to the formation of nanophases and CoSi 2 nanofilms. The E g value is 0.8 eV for the CoSi 2 nanophases with theta~ 3 ML and 0.6 eV for the CoSi 2 film. Keywords: nanophase, epitaxy, low-energy bombardment, surface, single crystal, island growth, ion dose, degree of coverage.

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